A 1.2V Receiver Front-End for Multi-Standard Wireless Applications in 65 nm CMOS LP

被引：2

作者：

Vidojkovic, M. ^{[1
]}

Sanduleanu, M. A. T. ^{[2
]}

Vidojkovic, V. ^{[3
]}

van der Tang, J. ^{[4
]}

Baltus, P. ^{[1
]}

van Roermund, A. H. M. ^{[1
]}

机构：

[1] Holst Ctr IMEC, Eindhoven, Netherlands

[2] IMEC, Leuven, Belgium

[3] Sitel Semicond, Shertogenbosch, Netherlands

[4] Broadcom, Bunnik, Netherlands

来源：

ESSCIRC 2008: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE | 2008年

关键词：

D O I：

10.1109/ESSCIRC.2008.4681880

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low-power low-voltage wide-band inductor-less multi-standard receiver RF front-end in a digital CMOS 65nm Low Power (LP) process is described. S11 less than -10 dB is measured in the frequency range from 10MHz up to 5GHz. The front-end featuring two gain modes, achieves a voltage gain of 29dB in the high voltage gain mode, and a voltage gain of 23dB in the low voltage gain mode. The 3dB bandwidth of the RF front-end is 2.5GHz. The measured NF at 1GHz is 5.5dB in the high gain mode and 7.7dB in the low gain mode. The front-end achieves an IIP3 of square 13.5dBm and square 7.5dBm in the high and the low gain mode, respectively. It consumes 13 mA from a 1.2V supply in both gain modes. The implemented front-end occupies a chip area of 670um x 860um.

引用

页码：414 / +

页数：2

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