Surface modification of single crystal silicon by Ar+ ion implantation and vacuum deposition of amorphous carbon coating

被引:3
|
作者
Sun, R
Xu, T
Xue, QJ [1 ]
机构
[1] Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China
[2] Henan Univ, Lab Special Funct Mat, Kaifeng 475001, Peoples R China
[3] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
来源
SURFACE & COATINGS TECHNOLOGY | 2006年 / 200卷 / 20-21期
基金
中国国家自然科学基金;
关键词
ion implantation; silicon; tribology; adhesion; amorphous carbon coating; microstructure;
D O I
10.1016/j.surfcoat.2005.08.125
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Single crystal silicon wafers (Si (100)) were implanted with 110 keV Ar+ ions at a fluence of 1 x10(16) ions/cm(2). Then the unimplanted and ion-implanted Si surfaces were coated with an amorphous carbon coating of 50 +/- 5 nm thick making use of vacuum vapor deposition. The microstructures of the unimplanted and Ar+ ion implanted Si wafers were analysed by means of transmission electron microscopy (TEM). The hardness and elastic modulus of the unimplanted and Ar+ ion implanted Si wafers were measured using a nano-indentation device. The adhesion strengths of the amorphous carbon coatings on the unimplanted and Ar+ ion implanted Si surfaces were determined making use of scratch test. The friction and wear behaviors of the samples were evaluated using a ball-on-disk reciprocating friction and wear tester. The morphologies of the wear and scratch tracks of the Si samples were observed using a scanning electron microscope (SEM). It was found that Ar+ ion implantation alone led to little effect on the friction and wear behavior of the Si sample. However, the amorphous carbon coating deposited on the Ar+ ion implanted Si surface showed much better friction-reducing and antiwear ability than that on the unimplanted Si surface. The formation of a mixed nano-crystal and amorphous silicon structure during the Ar+ ion implantation improves the ability of the amorphous carbon coating to resist plastic deformation, and hence increase the adhesion strength and antiwear-life of the amorphous carbon film. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:5794 / 5799
页数:6
相关论文
共 50 条
  • [1] Evolution of Surface Modification by Ar+ ion Implantation with incident angle into Sodium Potassium Niobate Single Crystal
    Saravanan, R.
    Rajesh, D.
    Rajasekaran, S. V.
    Perumal, R.
    Chitra, M.
    Jayavel, R.
    PROCEEDING OF INTERNATIONAL CONFERENCE ON RECENT TRENDS IN APPLIED PHYSICS & MATERIAL SCIENCE (RAM 2013), 2013, 1536 : 829 - 830
  • [2] Effect of Ar+ ion implantation on the nano-mechanical properties and microstructure of single crystal silicon
    Sun, R
    Xu, T
    Xue, QJ
    APPLIED SURFACE SCIENCE, 2005, 249 (1-4) : 386 - 392
  • [3] The study of ion mixed amorphous carbon films on single crystal silicon by C ion implantation
    Sun, Rong
    Xu, Tao
    Zhang, Jing-wei
    Xue, Qun-ji
    APPLIED SURFACE SCIENCE, 2006, 252 (12) : 4236 - 4243
  • [4] Modification of polycarbonate surface by Ar+ ion implantation for various opto-electronic applications
    Goyal, P. K.
    Kumar, V.
    Gupta, Renu
    Mahendia, S.
    Anita
    Kumar, S.
    VACUUM, 2012, 86 (08) : 1087 - 1091
  • [5] EFFECT OF LOW-ENERGY AR+ ION-IMPLANTATION ON SILICON SURFACE BARRIERS
    ASHOK, S
    KRAUTLE, H
    BENEKING, H
    MOGROCAMPERO, A
    THIN SOLID FILMS, 1985, 126 (3-4) : 251 - 256
  • [6] The Influence of the Energy of Ar+ Ion Implantation on the Photoluminescence of Porous Silicon
    Kozhemiako, A. V.
    Shemukhin, A. A.
    Nazarov, A. V.
    Spivak, Yu. M.
    Muratova, E. N.
    Chernysh, V. V.
    MOSCOW UNIVERSITY PHYSICS BULLETIN, 2020, 75 (06) : 590 - 595
  • [7] SURFACE-TOPOGRAPHY OF A CU SINGLE-CRYSTAL BY AR+ ION SPUTTERING
    SEN, AK
    GHOSE, D
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 61 (02): : 253 - 255
  • [8] Modification of tetrahedral amorphous carbon film by concurrent Ar ion bombardment during deposition
    Cheah, LK
    Shi, X
    Tay, BK
    Liu, E
    SURFACE & COATINGS TECHNOLOGY, 1998, 105 (1-2): : 91 - 96
  • [9] Electronic structure modification of the KTaO3 single-crystal surface by Ar+ bombardment
    Wadehra, Neha
    Tomar, Ruchi
    Halder, Soumyadip
    Sharma, Minaxi
    Singh, Inderjit
    Jena, Nityasagar
    Prakash, Bhanu
    De Sarkar, Abir
    Bera, Chandan
    Venkatesan, Ananth
    Chakraverty, S.
    PHYSICAL REVIEW B, 2017, 96 (11)
  • [10] Effects of silicon surface amorphization on single carbon atom deposition/implantation
    Briquet, Ludovic G. V.
    Philipp, Patrick
    Wirtz, Tom
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2013, 303 : 209 - 213