Effect of doping and vacancy defects on the adsorption of CO on graphene

被引:30
|
作者
Jia, Xiaotong [1 ]
Zhang, Hong [2 ]
Zhang, Zhiming [3 ]
An, Libao [1 ]
机构
[1] North China Univ Sci & Technol, Coll Mech Engn, Tangshan 063210, Hebei, Peoples R China
[2] North China Univ Sci & Technol, Coll Life Sci, Tangshan 063210, Hebei, Peoples R China
[3] North China Univ Sci & Technol, Coll Mat Sci & Engn, Tangshan 063210, Hebei, Peoples R China
基金
中国国家自然科学基金;
关键词
Graphene; Mn doping; Vacancy defect; Adsorption of CO; The first principles; GAS-SENSING PROPERTIES; DOPED GRAPHENE; AB-INITIO; FE; MOLECULE; ZNO;
D O I
10.1016/j.matchemphys.2020.123114
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The adsorption behavior of CO molecules on graphene has been computationally studied by using the first principles method. Results show that only weak physical adsorption is formed between CO and intrinsic or vacancy defected graphene. However, doping Mn atoms on graphene significantly increases the adsorption energy and charge density between graphene and CO. After the adsorption of CO molecules, impurity band appears in the band structure near the Fermi level of graphene and the total density of states of the adsorption system shifts, which enhances the electrical conductivity of the system. Therefore, doping Mn atoms can greatly improve the adsorption performance of CO molecules on graphene and result in strong chemisorption. Results also show that the adsorption effect of CO on Mn-doped intrinsic graphene is stronger than on Mn-doped vacancy defected graphene. Mn-doped intrinsic graphene is more suitable for making high-performance CO gas sensors.
引用
收藏
页数:9
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