Photoelectric Characterization Technique Based on Terahertz Semiconductor Quantum-Well Devices and Its Applications

被引：0
|
作者：
Tan Zhiyong [1 ,2 ]
Cao Juncheng [1 ,2 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, Shanghai 200050, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
来源：
CHINESE JOURNAL OF LASERS-ZHONGGUO JIGUANG | 2019年 / 46卷 / 06期
关键词：
terahertz technology; quantum-cascade laser; quantum-well photodetector; photoelectric characterization; fast modulation and detection; CASCADE LASERS; HIGH-TEMPERATURE;
D O I：
10.3788/CJL201916.0611001
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Photoelectric characterization technique is an important foundation of the terahertz technology. It covers photoelectric device characterization, spectral measurement, beam improvement, and communication and imaging applications in terahertz region, and plays an important role in terahertz application field. Firstly, the working principle and the latest progress of two kinds of terahertz semiconductor quantum devices arc presented. Then, their applications in terahertz photoelectric characterization such as pulse light power measurement and detector responsivity calibration, and their applications in terahertz fast modulation and detection as well as terahertz scanning imaging systems arc summarized. Finally, the improvements of the above characterization techniques arc also introduced and discussed, including the methods to improve the terahertz light beam quality and the effective detection area of detectors. The potential applications of devices and characterization techniques in the future arc also presented.
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页数：14
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