An appropriate model for the noise power spectrum produced by traps at the Si-SiO2 interface: a study of the influence of a time-dependent Fermi level

In this work we have developed an appropriate and novel model for computing the contribution of all traps at the Si-SiO(2) interface to the low frequency (LF) noise power spectrum. In our approach we have used theoretical and experimental convex 'U'-shape curves to model the density of states of traps distributed at the interface, predicting the qualitative and quantitative behavior for the reduction of LF noise. In the model development, basic discrete device physics quantities are used. The low frequency noise behavior of metal-oxide-semiconductor devices under cyclo-stationary excitation is evaluated through analytical and numerical calculations, and a comparison to relevant experimental data found in the literature is provided.