A 2D MEMS grating based CMOS compatible poly-SiGe variable optical attenuator

被引：1

作者：

Rudra, S. ^{[1
]}

Van Hoof, R. ^{[2
]}

De Coster, J. ^{[2
]}

Bryce, G. ^{[2
]}

Severi, S. ^{[2
]}

Witvrouw, A. ^{[2
]}

Van Thourhout, D. ^{[1
]}

机构：

[1] Univ Ghent, IMEC, INTEC, Photon Res Grp, B-9000 Ghent, Belgium

[2] IMEC, Louvain, Belgium

来源：

MICROELECTRONIC ENGINEERING | 2013年 / 105卷

关键词：

Micro-opto-electro-mechanical systems (MOEMS); Variable optical attenuator (VOA); Grating; Monolithic integration; INTEGRATION;

D O I：

10.1016/j.mee.2012.12.014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A variable optical attenuator based on a 2D MEMS grating is described. The device is a perforated and suspended poly-SiGe membrane with fixed islands within the perforations. It specularly reflects light in the non-actuated state, whereas after actuation the membrane deflects downwards forming a grating which diffracts light in higher orders reducing the intensity of the specular reflection. Using a laser of 400 nm wavelength, we could obtain an attenuation level of 20 dB with 0.11 dB of polarization dependent loss. A close match was obtained between the experimental and simulated mechanical behavior of the device showing the possibility of efficiently extending its use in the NIR regime. Additionally, as the device is made of poly-SiGe deposited at low temperature, it can be monolithically integrated with CMOS in the future. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：8 / 12

页数：5

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