X-ray diffraction studies of p-CdS:Cu thin films

被引：21

作者：

Kashiwaba, Y ^{[1
]}

Komatsu, T

Nishikawa, M

Ishikawa, Y

Segawa, K

Hayasi, Y

机构：

[1] Iwate Univ, Dept Elect & Elect Engn, Morioka, Iwate 0208551, Japan

[2] Seiko Epson Corp, Fujimi, Japan

[3] Iwate Ind Res Inst, Morioka, Iwate 0200852, Japan

[4] Hachinohe Inst Technol, Dept Elect Engn, Hachinohe 0391192, Japan

来源：

THIN SOLID FILMS | 2002年 / 408卷 / 1-2期

关键词：

CdS thin film; Cu-doping; p-type; x-ray diffraction;

D O I：

10.1016/S0040-6090(02)00131-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

X-Ray diffraction (XRD) was performed in order to detect p-type Cu-S compounds such as Cu2S in p-type Cu-doped CdS (CdS:Cu) films fabricated by the vacuum deposition of CdS on thin Cu films on a glass substrate. The diffraction angles of CdS:Cu films and the powder corresponded to those of hexagonal US, and their relative peak intensities were also similar to those of the CdS. Lattice constants of the CdS:Cu corresponded to those of hexagonal US within 0.06% of difference. However. some XRD lines of CdS:Cu were close to a few lines of each Cu-S compound. Detailed examination of d-spacings and the relative peak intensities of the diffraction patterns of the CdS:Cu and each Cu-S compound was carried out. However, XRD traces of Cu-S compounds could not be detected in the CdS:Cu films. Therefore. it is thought that crystalline Cu-S compounds were not formed in p-type Cu-doped US films. (C) 2002 Elsevier Science B.V All rights reserved.

引用

页码：43 / 50

页数：8

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