We analyze randomized benchmarking for arbitrary gate-dependent noise and prove that the exact impact of gate-dependent noise can be described by a single perturbation term that decays exponentially with the sequence length. That is, the exact behavior of randomized benchmarking under general gate-dependent noise converges exponentially to a true exponential decay of exactly the same form as that predicted by previous analysis for gate-independent noise. Moreover, we show that the operational meaning of the decay parameter for gate-dependent noise is essentially unchanged, that is, we show that it quantifies the average fidelity of the noise between ideal gates. We numerically demonstrate that our analysis is valid for strongly gate-dependent noise models. We also show why alternative analyses do not provide a rigorous justification for the empirical success of randomized benchmarking with gate-dependent noise.
机构:
Univ Paris 07, Lab Mat & Phenomenes Quant, CNRS, UMR 7162, Batiment Condorcet, F-75205 Paris 13, FranceUniv Paris 07, Lab Mat & Phenomenes Quant, CNRS, UMR 7162, Batiment Condorcet, F-75205 Paris 13, France
Measson, M. -A.
Cazayous, M.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Paris 07, Lab Mat & Phenomenes Quant, CNRS, UMR 7162, Batiment Condorcet, F-75205 Paris 13, FranceUniv Paris 07, Lab Mat & Phenomenes Quant, CNRS, UMR 7162, Batiment Condorcet, F-75205 Paris 13, France
Cazayous, M.
Sacuto, A.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Paris 07, Lab Mat & Phenomenes Quant, CNRS, UMR 7162, Batiment Condorcet, F-75205 Paris 13, FranceUniv Paris 07, Lab Mat & Phenomenes Quant, CNRS, UMR 7162, Batiment Condorcet, F-75205 Paris 13, France
Sacuto, A.
Gallais, Y.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Paris 07, Lab Mat & Phenomenes Quant, CNRS, UMR 7162, Batiment Condorcet, F-75205 Paris 13, FranceUniv Paris 07, Lab Mat & Phenomenes Quant, CNRS, UMR 7162, Batiment Condorcet, F-75205 Paris 13, France
机构:
Samsung Adv Inst Technol, Res Ctr Time Domain Nanofunct Devices, Yongin 446712, Gyeonggi Do, South Korea
Korea Univ, Sch Elect Engn, Seoul 136701, South KoreaSamsung Adv Inst Technol, Res Ctr Time Domain Nanofunct Devices, Yongin 446712, Gyeonggi Do, South Korea
Choi, M. S.
Lee, D. J.
论文数: 0引用数: 0
h-index: 0
机构:
Samsung Adv Inst Technol, Res Ctr Time Domain Nanofunct Devices, Yongin 446712, Gyeonggi Do, South Korea
Korea Univ, Sch Elect Engn, Seoul 136701, South KoreaSamsung Adv Inst Technol, Res Ctr Time Domain Nanofunct Devices, Yongin 446712, Gyeonggi Do, South Korea
Lee, D. J.
Lee, S. J.
论文数: 0引用数: 0
h-index: 0
机构:
Samsung Adv Inst Technol, Res Ctr Time Domain Nanofunct Devices, Yongin 446712, Gyeonggi Do, South Korea
Korea Univ, Sch Elect Engn, Seoul 136701, South KoreaSamsung Adv Inst Technol, Res Ctr Time Domain Nanofunct Devices, Yongin 446712, Gyeonggi Do, South Korea
Lee, S. J.
Hwang, D. H.
论文数: 0引用数: 0
h-index: 0
机构:
Samsung Adv Inst Technol, Res Ctr Time Domain Nanofunct Devices, Yongin 446712, Gyeonggi Do, South Korea
Korea Univ, Sch Elect Engn, Seoul 136701, South KoreaSamsung Adv Inst Technol, Res Ctr Time Domain Nanofunct Devices, Yongin 446712, Gyeonggi Do, South Korea
Hwang, D. H.
Lee, J. H.
论文数: 0引用数: 0
h-index: 0
机构:
Samsung Adv Inst Technol, Res Ctr Time Domain Nanofunct Devices, Yongin 446712, Gyeonggi Do, South Korea
Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, SKKU Adv Inst Nanotechnol, Suwon 440746, Gyeonggi, South KoreaSamsung Adv Inst Technol, Res Ctr Time Domain Nanofunct Devices, Yongin 446712, Gyeonggi Do, South Korea
Lee, J. H.
Aoki, N.
论文数: 0引用数: 0
h-index: 0
机构:
Chiba Univ, Grad Sch Adv Integrat Sci, Inage Ku, Chiba 2638522, JapanSamsung Adv Inst Technol, Res Ctr Time Domain Nanofunct Devices, Yongin 446712, Gyeonggi Do, South Korea
Aoki, N.
Ochiai, Y.
论文数: 0引用数: 0
h-index: 0
机构:
Chiba Univ, Grad Sch Adv Integrat Sci, Inage Ku, Chiba 2638522, JapanSamsung Adv Inst Technol, Res Ctr Time Domain Nanofunct Devices, Yongin 446712, Gyeonggi Do, South Korea
Ochiai, Y.
Kim, H. -J.
论文数: 0引用数: 0
h-index: 0
机构:
Kumoh Natl Inst Technol, Dept Appl Chem, Gumi 730701, Gyeongbuk, South KoreaSamsung Adv Inst Technol, Res Ctr Time Domain Nanofunct Devices, Yongin 446712, Gyeonggi Do, South Korea
Kim, H. -J.
论文数: 引用数:
h-index:
机构:
Whang, D.
Kim, S.
论文数: 0引用数: 0
h-index: 0
机构:
Korea Univ, Sch Elect Engn, Seoul 136701, South KoreaSamsung Adv Inst Technol, Res Ctr Time Domain Nanofunct Devices, Yongin 446712, Gyeonggi Do, South Korea
Kim, S.
Hwang, S. W.
论文数: 0引用数: 0
h-index: 0
机构:
Samsung Adv Inst Technol, Res Ctr Time Domain Nanofunct Devices, Yongin 446712, Gyeonggi Do, South KoreaSamsung Adv Inst Technol, Res Ctr Time Domain Nanofunct Devices, Yongin 446712, Gyeonggi Do, South Korea
机构:
Niels Bohr Institute, Nano-Science Center, University of Copenhagen, DK-2100 CopenhagenNiels Bohr Institute, Nano-Science Center, University of Copenhagen, DK-2100 Copenhagen
Jespersen T.S.
Grove-Rasmussen K.
论文数: 0引用数: 0
h-index: 0
机构:
Niels Bohr Institute, Nano-Science Center, University of Copenhagen, DK-2100 Copenhagen
NTT Basic Research Laboratories, NTT Corporation, Atsugi 243-0198Niels Bohr Institute, Nano-Science Center, University of Copenhagen, DK-2100 Copenhagen
Grove-Rasmussen K.
Paaske J.
论文数: 0引用数: 0
h-index: 0
机构:
Niels Bohr Institute, Nano-Science Center, University of Copenhagen, DK-2100 CopenhagenNiels Bohr Institute, Nano-Science Center, University of Copenhagen, DK-2100 Copenhagen
Paaske J.
Muraki K.
论文数: 0引用数: 0
h-index: 0
机构:
NTT Basic Research Laboratories, NTT Corporation, Atsugi 243-0198Niels Bohr Institute, Nano-Science Center, University of Copenhagen, DK-2100 Copenhagen
Muraki K.
论文数: 引用数:
h-index:
机构:
Fujisawa T.
Nygård J.
论文数: 0引用数: 0
h-index: 0
机构:
Niels Bohr Institute, Nano-Science Center, University of Copenhagen, DK-2100 CopenhagenNiels Bohr Institute, Nano-Science Center, University of Copenhagen, DK-2100 Copenhagen
Nygård J.
Flensberg K.
论文数: 0引用数: 0
h-index: 0
机构:
Niels Bohr Institute, Nano-Science Center, University of Copenhagen, DK-2100 CopenhagenNiels Bohr Institute, Nano-Science Center, University of Copenhagen, DK-2100 Copenhagen