Position-controlled InP nanowires with 10-100 μm pitches using Au-deposited SiO2/InP patterned substrates

被引：16

作者：

Kawaguchi, Kenichi ^{[1
]}

Sudo, Hisao ^{[1
]}

Matsuda, Manabu ^{[1
]}

Ekawa, Mitsuru ^{[1
]}

Yamamoto, Tsuyoshi ^{[1
]}

Arakawa, Yasuhiko ^{[2
,3
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

[2] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan

[3] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 06期

关键词：

CHEMICAL-VAPOR-DEPOSITION; CATALYST-FREE GROWTH; QUANTUM DOTS; SEMICONDUCTOR NANOWIRES; ARRAYS; GAAS; REGROWTH; PRESSURE; EPITAXY; MOVPE;

D O I：

10.1063/1.4865260

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Vapor-liquid-solid (VLS) growth of position-controlled InP nanowires (NWs) with 10-100 mu m pitches was investigated on SiO2-mask-patterned InP substrates. In addition to the vertical VLS NWs formed by Au catalysts, excess group-III materials that were diffused from the large mask region formed plural inclined NW-like structures from single openings. The introduction of HCl gas during the NW growth was found to remove the excess group-III materials effectively. Vertical InP NWs with minimal tapering were formed by controlling the HCl flow rate while suppressing the formation of tilted NWs. InP NWs having lengths independent of the pattern pitches, which were regulated by the VLS mechanism, were obtained. (C) 2014 AIP Publishing LLC.

引用

页数：4