Dynamic performance analysis of a 3.3 kV SiC MOSFET half-bridge module with parallel chips and body-diode freewheeling

被引：0
|
作者：
Hussein, Abdallah [1 ]
Mouawad, Bassem [1 ]
Castellazzi, Alberto [1 ]
机构：
[1] Univ Nottingham, Power Elect Machines & Control Grp, Nottingham, England
来源：
PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2018年
关键词：
Silicon carbide; SiC MOSFETs; power modules; inverter;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Recently, 3.3 and 6.5 kV power MOSFETs have been introduced. Based on the 3.3 kV device, a 100 A half-bridge power module has been developed, using parallel chips for current scaling and relying exclusively on the use of the transistors body-diode for current free-wheeling (i.e., no anti-parallel external diode chips are used). This paper presents a thorough parametric characterization of the module switching performance. Single-chip and parallel-chip operation are investigated in both double-pulsea type tests and realistic single-phase inverter operation.
引用
收藏
页码：463 / 466
页数：4
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