High Power Solid-State DRO With Power Booster

被引：0

作者：

Shi, Tiefeng ^{[1
]}

Li, Kaldi ^{[1
]}

机构：

[1] Freescale Semicond Inc, NMSG, Tempe, AZ USA

来源：

2012 7TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2012年

关键词：

High Power; DRO; Power Boost;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 2.446GHz high power dielectric resonator oscillator (DRO) is presented, which can generate 330W CW output power at room temperature with -98dBc/Hz at 1kHz offset,-112.6dBc/Hz at 10kHz offset, and -132dBc/Hz at 1MHz offset, with a drain efficiency of 45% by using two Freescale LDMOS transistors. In contrast, the single-device LDMOS DRO without power boost can deliver 138W CW power with -111.2dBc/Hz at 10 kHz offset and 41% drain efficiency.

引用

页码：461 / 464

页数：4

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