Large scale fabrication of well-aligned CdS/p-Si shell/core nanowire arrays for photodetectors using solution methods

被引:25
|
作者
Jiang, Yurong [1 ]
Li, Chen [1 ]
Cao, Weiwei [1 ]
Jiang, Yanrong [1 ]
Shang, Shuying [1 ]
Xia, Congxin [1 ]
机构
[1] Henan Normal Univ, Coll Phys & Elect Engn, Henan Key Lab Photovolta Mat, Xinxiang 453007, Peoples R China
关键词
PHOTOVOLTAIC DEVICES; QUANTUM DOTS;
D O I
10.1039/c5cp00679a
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report a facile approach for the preparation of the vertically aligned, large scale CdS/p-Si shell/core nanowire heterojunction arrays based on successive ionic layer adsorption and reaction deposition. The results indicate that the rectifying characteristics of CdS/Si shell/core nanowire arrays can be tailored by changing the number of SILAR cycles, and the CdS/Si shell-core nanowire heterojunctions have good photo-sensitivity (the ratio of photocurrent to dark current could reach 14.96 at -1 V reverse bias) under AM 1.5 (1 Sun) illumination. Furthermore, the electron transport mechanism across the CdS/Si nano-heterojunctions is also discussed in detail. This reported CdS/p-Si shell/core nanowire structure offers a generic approach for the integration of new functional materials for photo-electronics applications.
引用
收藏
页码:16784 / 16790
页数:7
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