Determination of nitrogen in silicon carbide by secondary ion mass spectrometry

被引：0

作者：

Ber, BY

Kazantsev, DY

Kalinina, EV

Kovarskii, AP

Kossov, VG

Hallen, A

Yafaev, RR

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Royal Inst Technol, Dept Microelect & Informat Technol, Solid State Elect Lab, SE-16440 Kista, Sweden

来源：

JOURNAL OF ANALYTICAL CHEMISTRY | 2004年 / 59卷 / 03期

关键词：

Nitrogen; Mass Spectrometry; Carbide; Detection Limit; Silicon Carbide;

D O I：

10.1023/B:JANC.0000018968.09670.88

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The emission of atomic and complex nitrogen ions, which are the main impurity determining the n type conduction of silicon carbide, is investigated. It is shown that, among all the secondary ions of the CxN and SixN kind (x = 0, 1, 2, 3), the (26)(CN)(-) fragment exhibits the highest ion yield. The use of an ion peak with a specified mass as an analytical signal provides a detection limit for nitrogen in SiC at a level of 10(16) cm(-3). This result is attained in measurements at high mass resolution (M/DeltaM = 7500, interference peak (26)(C-13(2))(-)).

引用

页码：250 / 254

页数：5

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