Indium Gallium Arsenide Quantum Dot Gate Field-Effect Transistor Using II-VI Tunnel Insulators Showing Three-State Behavior

被引：4

作者：

Chan, P. -Y. ^{[1
]}

Suarez, E. ^{[1
]}

Gogna, M. ^{[1
]}

Miller, B. I. ^{[1
]}

Heller, E. K. ^{[2
]}

Ayers, J. E. ^{[1
]}

Jain, F. C. ^{[1
]}

机构：

[1] Univ Connecticut, Dept Elect & Comp Engn, Storrs, CT 06269 USA

[2] RSoft Design Grp Inc, Ossining, NY 10562 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2012年 / 41卷 / 10期

关键词：

InGaAs MOSFET; high kappa; ZnSe/ZnS/ZnMgS tunnel insulator; II-VI insulators; quantum dot gate; three-state behavior; germanium; LEAKAGE CURRENT; MOORES LAW; CIRCUITS; REDUCTION; POWER; FETS;

D O I：

10.1007/s11664-012-2176-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an indium gallium arsenide (InGaAs) quantum dot gate field-effect transistor (QDG-FET) that exhibits an intermediate "i" state in addition to the conventional ON and OFF states. The QDG-FET utilized a II-VI gate insulator stack consisting of lattice-matched ZnSe/ZnS/ZnMgS/ZnS/ZnSe for its high-kappa and wide-bandgap properties. Germanium oxide (GeO (x) )-cladded germanium quantum dots were self-assembled over the gate insulator stack, and they allow for the three-state behavior of the device. Electrical characteristics of the fabricated device are also presented.

引用

页码：2810 / 2815

页数：6

共 16 条

[1] Indium Gallium Arsenide Quantum Dot Gate Field-Effect Transistor Using II–VI Tunnel Insulators Showing Three-State Behavior
P.-Y. Chan
E. Suarez
M. Gogna
B.I. Miller
E.K. Heller
J.E. Ayers
F.C. Jain
Journal of Electronic Materials, 2012, 41 : 2810 - 2815
[2] Three-state quantum dot gate field-effect transistor in silicon-on-insulator
Karmakar, Supriya
Gogna, Mukesh
Suarez, Ernesto
Jain, Faquir C.
IET CIRCUITS DEVICES & SYSTEMS, 2015, 9 (02) : 111 - 118
[3] Fabrication and Simulation of an Indium Gallium Arsenide Quantum-Dot-Gate Field-Effect Transistor (QDG-FET) with ZnMgS as a Tunnel Gate Insulator
Chan, P. -Y.
Gogna, M.
Suarez, E.
Al-Amoody, F.
Karmakar, S.
Miller, B. I.
Heller, E. K.
Ayers, J. E.
Jain, F. C.
JOURNAL OF ELECTRONIC MATERIALS, 2013, 42 (11) : 3259 - 3266
[4] Fabrication and Simulation of an Indium Gallium Arsenide Quantum-Dot-Gate Field-Effect Transistor (QDG-FET) with ZnMgS as a Tunnel Gate Insulator
P.-Y. Chan
M. Gogna
E. Suarez
F. Al-Amoody
S. Karmakar
B. I. Miller
E. K. Heller
J. E. Ayers
F. C. Jain
Journal of Electronic Materials, 2013, 42 : 3259 - 3266
[5] Nonvolatile Memory Effect in Indium Gallium Arsenide-Based Metal-Oxide-Semiconductor Devices Using II-VI Tunnel Insulators
Chan, P. -Y.
Gogna, M.
Suarez, E.
Karmakar, S.
Al-Amoody, F.
Miller, B. I.
Jain, F. C.
JOURNAL OF ELECTRONIC MATERIALS, 2011, 40 (08) : 1685 - 1688
[6] Nonvolatile Memory Effect in Indium Gallium Arsenide-Based Metal–Oxide–Semiconductor Devices Using II–VI Tunnel Insulators
P.-Y. Chan
M. Gogna
E. Suarez
S. Karmakar
F. Al-Amoody
B. I. Miller
F. C. Jain
Journal of Electronic Materials, 2011, 40 : 1685 - 1688
[7] Nonvolatile Memories Using Quantum Dot (QD) Floating Gates Assembled on II-VI Tunnel Insulators
Suarez, E.
Gogna, M.
Al-Amoody, F.
Karmakar, S.
Ayers, J.
Heller, E.
Jain, F.
JOURNAL OF ELECTRONIC MATERIALS, 2010, 39 (07) : 903 - 907
[8] Novel Quantum Dot Gate FETs and Nonvolatile Memories Using Lattice-Matched II-VI Gate Insulators
Jain, F. C.
Suarez, E.
Gogna, M.
Alamoody, F.
Butkiewicus, D.
Hohner, R.
Liaskas, T.
Karmakar, S.
Chan, P. -Y.
Miller, B.
Chandy, J.
Heller, E.
JOURNAL OF ELECTRONIC MATERIALS, 2009, 38 (08) : 1574 - 1578
[9] Physics-based simulation study of high-performance gallium arsenide phosphide-indium gallium arsenide tunnel field-effect transistor
Raad, Bhagwan Ram
Sharma, Dheeraj
Nigam, Kaushal
Kondekar, Pravin
MICRO & NANO LETTERS, 2016, 11 (07): : 366 - 368
[10] Quantum Dot Channel (QDC) Field-Effect Transistors (FETs) Using II-VI Barrier Layers
Jain, F.
Karmakar, S.
Chan, P. -Y.
Suarez, E.
Gogna, M.
Chandy, J.
Heller, E.
JOURNAL OF ELECTRONIC MATERIALS, 2012, 41 (10) : 2775 - 2784

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