140-220 GHz Imaging Front-end Based on 250 nm InP/InGaAs/InP DHBT Process

被引：4

作者：

Vassilev, V. ^{[1
]}

Zirath, H. ^{[1
]}

Furtula, V. ^{[1
]}

Karandikar, Y. ^{[1
]}

Eriksson, K. ^{[1
]}

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Ninosci MC2, Microwave Elect Lab, S-41296 Gothenburg, Sweden

来源：

PASSIVE AND ACTIVE MILLIMETER-WAVE IMAGING XVI | 2013年 / 8715卷

关键词：

Power detectors; InP; MMIC; DHBT; radiometers; receivers; passive imaging; G-band; responsivity; NEP; flicker noise; remote sensing;

D O I：

10.1117/12.2018397

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a pre-amplified detector receiver based on a 250 nm InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) process available from the Teledyne scientific. The front end consists of a double slot antenna followed by a five stage low noise amplifier and a detector, all integrated onto the same circuit. Results of measured responsivity and noise are presented. The receiver is characterized through measuring its response to hot (293) and cold (78) K terminations. Measurements of the voltage noise spectrum at the video output of the receiver are presented and can be used to derive the temperature resolution of the receiver for a specific video bandwidth.

引用

页数：10

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