Transparent semiconducting SrTiO3 crystal fabricated by heating treatment with gaseous ammonia and CeO2 powder

被引:0
|
作者
Morimoto, Yuka [1 ]
Nishiyama, Junji [1 ]
Takeda, Hiroaki [1 ]
Tsurumi, Takaaki [1 ]
Hoshina, Takuya [1 ]
机构
[1] Tokyo Inst Technol, Sch Mat & Chem Technol, Nanophonon Lab, Meguro Ku, Tokyo 1528552, Japan
来源
SCIENTIFIC REPORTS | 2018年 / 8卷
关键词
D O I
10.1038/s41598-018-23019-9
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
A transparent semiconducting SrTiO3 single crystal with a resistivity of the order of 10(3) Omega.cm was fabricated by heating a SrTiO3 single crystal with gaseous ammonia and CeO2 powder. Conductive atomic force microscope (C-AFM) measurement revealed that micro-sized voids were formed and the high conductivity was exhibited only at around the voids. It is considered that the micro-sized voids were caused by the concentrated SrO planar defects, and TiO2-terminated structure with oxygen vacancies contributed to the two-dimensional conduction. In the heating process, the CeO2 powder acted as an oxygen source, and radicals such as NH2 and NH were generated by the reaction of oxygen and ammonia. The radicals may have contributed to the formation of three-dimensional network of the conductive paths consisting of SrO planar defects without the reduction of the bulk components. The electrons were localized on the TiO2-terminated structure, and the volume content of the conductive paths was small compared to the insulating bulk component. Therefore, the crystal was optically transparent and semiconducting.
引用
收藏
页数:7
相关论文
共 50 条
  • [1] Transparent semiconducting SrTiO3 crystal fabricated by heating treatment with gaseous ammonia and CeO2 powder
    Yuka Morimoto
    Junji Nishiyama
    Hiroaki Takeda
    Takaaki Tsurumi
    Takuya Hoshina
    Scientific Reports, 8
  • [2] Conductivity of CeO2 Modified SrTiO3 Ceramics
    肖鸣山
    陈玲
    张成琚
    王希香
    JournalofRareEarths, 1995, (01) : 16 - 20
  • [3] Defects in CeO2/SrTiO3 fabricated by automatic feeding epitaxy probed using positron annihilation
    Uedono, A
    Shimoyama, K
    Kiyohara, M
    Yamabe, K
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (08) : 5193 - 5198
  • [4] Defects in CeO2/SrTiO3 fabricated by automatic feeding epitaxy probed using positron annihilation
    Uedono, A. (uedono@ims.tsukuba.ac.jp), 1600, American Institute of Physics Inc. (94):
  • [5] Growth mechanism of SrTiO3 thin film on CeO2(001) surface
    Yamada, T
    Wakiya, N
    Shinozaki, K
    Mizutani, N
    ASIAN CERAMIC SCIENCE FOR ELECTRONICS II AND ELECTROCERAMICS IN JAPAN V, PROCEEDINGS, 2002, 228-2 : 137 - 140
  • [6] Orientation competition growth and mechanism of SrTiO3 film on CeO2 layer
    Ye, Jiachao
    Mou, Shaojing
    Zhu, Rongji
    Liu, Linfei
    Li, Yijie
    VACUUM, 2021, 194
  • [7] Structure and ionic conduction enhancement mechanisms at CeO2/SrTiO3 heterointerfaces
    Zhu, Bonan
    Schusteritsch, Georg
    Li, Weiwei
    Xing, Wandong
    Yu, Rong
    Pickard, Chris J.
    MacManus-Driscoll, Judith L.
    APPLIED PHYSICS REVIEWS, 2024, 11 (02):
  • [8] Semiconductor Heterostructure SrTiO3/CeO2 Electrolyte Membrane Fuel Cells
    Shi, Quan
    Chen, Jiahe
    Xing, Yueming
    Zhu, Bin
    Wu, Yan
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2019, 167 (05)
  • [9] Preparation of CeO2\SrTiO3 bilayers as a barrier material for SIS Josephson junctions
    Wakana, H
    Michikami, O
    PHYSICA C, 2001, 357 (357-360): : 1440 - 1443
  • [10] CeO2掺杂的SrTiO3陶瓷的介电性质
    肖鸣山
    韩力群
    陈晨
    功能材料, 1993, (03) : 206 - 209