Room-temperature light-emission from Ge quantum dots in photonic crystals

被引:7
|
作者
Xia, Jinsong [1 ]
Nemoto, Koudai [1 ]
Ikegami, Yuta [1 ]
Usami, Noritaka [2 ]
Nakata, Yasushi [3 ]
Shiraki, Yasuhiro [1 ]
机构
[1] Musashi Inst Technol, Adv Res Labs, Setagaya Ku, Tokyo 1580082, Japan
[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 980, Japan
[3] Horiba Ltd, Tokyo 1010031, Japan
关键词
Silicon; Light-emission; Photonic crystal; Microcavity; Ge quantum dot;
D O I
10.1016/j.tsf.2008.08.042
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Multiple layers of Ge self-assembled quantum dots were embedded into two-dimensional silicon photonic crystal microcavities fabricated on silicon-on-insulator substrates. Microphotoluminescence was used to study the light-emission characteristic of the Ge quantum dots in the microcavities. Strong resonant room-temperature light-emission was observed in the telecommunication wavelength region. Significant enhancement of the luminescence from Ge dots was obtained due to the resonance in the cavities. Multiple sharp resonant peaks dominated the spectrum, showing strong optical resonance inside the cavity. By changing the lattice constant of photonic crystal structure, the wavelengths of the resonant peaks are tuned in the wide wavelength range from 1.2 to 1.6 mu m. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:125 / 127
页数:3
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