Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (vol 45, pg 227, 2006)

被引：0

作者：

Lee, Sung-Hyun

Hong, Wan-Shick ^{[1
]}

Kim, Jong-Man

Lim, Hyu-Ck

Park, Kuyng-Bae

Cho, Chu-Lae

Lee, Kyung-Eun

Kim, Do-Young

Jung, Ji-Sim

Kwon, Jang-Yeon

Noguchi, Takashi

机构：

[1] Univ Seoul, Dept Nano Sci & Technol, Seoul 130743, South Korea

[2] SAIT, Yongin 449901, Kyunggido, South Korea

[3] Sejong Univ, Dept Elect Engn, Seoul 143747, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2006年 / 45卷 / 17-19期

关键词：

D O I：

10.1143/JJAP.45.L485

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L485 / L485

页数：1

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[1] Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application
Lee, SH
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Kwon, JY
Noguchi, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (8-11): : L227 - L229
[2] Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application
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Hong, Wan-Shick
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[3] Erratum: Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition ( less than or equal 150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (Japanese Journal Applied Physics (2006) 45 (L227))
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Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (&lt;150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (vol 45, pg 227, 2006)

Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (vol 45, pg 227, 2006)