Superluminescent diodes based on single-quantum-well (GaAl)As heterostructures.

被引：2
|
作者：
Batovrin, VK
Garmash, IA
Gelikonov, VM
Gelikonov, GV
Lyubarskii, AV
Plyavenek, AG
Safin, SA
Semenov, AT
Shidlovskii, VR
Shramenko, MV
Yakubovich, SD
机构：
[1] ALL RUSSIOAN OPT PHYS MEASUREMENT RES INST,OPT ELECT JOINT LAB,MOSCOW,RUSSIA
[2] RUSSIAN ACAD SCI,INST APPL PHYS,NIZHNII NOVGOROD 603600,RUSSIA
来源：
KVANTOVAYA ELEKTRONIKA | 1996年 / 23卷 / 02期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Theoretical and experimental investigations were made of the power, spectral, and polarisation characteristics of superluminescent diodes based on (GaAl)As heterostructures with separate confinement and a quantum-well active layer. The technical characteristics of these diodes were not inferior to those of superluminescent diodes based on traditional double-sided heterostructures. The new diodes were superior to the traditional heterostructures in respect of the half-width of the emission spectrum which was up to 100 nm, corresponding to a coherence length less than 7 mu m. Test samples of light-emitting modules based on the investigated diodes were constructed.
引用
收藏
页码：113 / 118
页数：6
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