Temperature-Dependent Photoluminescence of Nanostructured ZnO

被引：4
|
作者：
Wu, C. X. [1 ]
Zhou, M. [1 ,2 ]
Zhang, S. G. [1 ]
Cai, L. [1 ]
机构：
[1] Jiangsu Univ, Ctr Photon Mfg Sci & Technol, Sch Mat Sci & Engn, Zhenjiang 212013, Jiangsu, Peoples R China
[2] Tsinghua Univ, State Key Lab Tribol, Beijing 100084, Peoples R China
来源：
NANOSCIENCE AND NANOTECHNOLOGY LETTERS | 2013年 / 5卷 / 02期
基金：
中国国家自然科学基金;
关键词：
Nanostructured ZnO; Temperature-Dependent Photoluminescence; Transition; EMISSION;
D O I：
10.1166/nnl.2013.1496
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
ZnO nanostructures were synthesized on Si (100) substrates via vapor-liquid-solid (VLS) process. The morphology and the crystal quality of the product were controlled by reaction time in the mixture atmosphere of N-2 and O-2. Combining with the microstructure analysis through X-ray diffraction and selected area electron diffraction (SAED), the temperature-dependent photoluminescence was measured to understand the light emission behaviors. The results demonstrated three kinds of optical transitions: exciton related transition, free charge carrier transition to the bound states, and donor acceptor pair transition.
引用
收藏
页码：174 / 177
页数：4
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