Physical properties of semiconducting transition metal silicides and their prospects in Si-based device applications

Semiconducting transition metal silicides are of interest as potential candidates for new Si-based devices. The recent acvances obtained on the understanding of the physical properties of this group of materials are summarized with special emphasis on B-FeSi2. Characteristic features of the electronic structure are outlined. Interband and infrared optical properties are in good agreement with theoretical predictions. Light emission could be observed from implanted B-FeSi2 layers only. Incorporation of corresponding dopands gives n- and p-type material. Carrier interaction with nonpolar optical and acoustic phonons as well as neutral impurities has to be taken into account Problems and prospects of application of semiconducting silicides will be discussed.