EUV scatterometry-based measurement method for the determination of phase roughness

被引:2
|
作者
Chao, Rikon [1 ]
Gullikson, Eric [1 ]
Goldstein, Michael
Goodwin, Frank
Teki, Ranganath
Neureuther, Andy
Naulleau, Patrick [1 ]
机构
[1] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Ctr Xray Opt, Berkeley, CA 94720 USA
来源
PHOTOMASK TECHNOLOGY 2013 | 2013年 / 8880卷
关键词
Phase roughness; power spectral density; scatterometry; extreme ultraviolet lithography; metrology;
D O I
10.1117/12.2027695
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
AFM-based roughness measurement reveals the topography of EUV masks, but is only sensitive to the top surface [1]. Scatterometry provides a more accurate approach to characterize the effective phase roughness of the multilayer, and it becomes important to determine the valid metrology for roughness characterization. In this work, the power spectral density calculated from scatterometry is compared to that from AFM for measurements before and after coating of substrates with a range of roughness levels. Results show noticeable discrepancies between AFM- and scatterometry-measured roughness, and indicates that when the physical surface roughness increases with deposition the EUV penetration into the multilayer tends to mitigate this effect. In this paper, we describe an EUV scatterometry-based measurement method for the determination of phase roughness with the goal of minimizing the amount of physical scattering data to be collected and rendering the method compatible with potential future standalone EUV reflectometer tools.
引用
收藏
页数:4
相关论文
共 50 条
  • [1] Scatterometry-based on-product focus measurement and monitoring
    Hinnen, Paul
    Wang, Vivien
    Mardanpour, Hossein
    Beltman, Jan
    Rottenkolber, Erica
    Leewis, Christian
    Brunner, Timothy A.
    Wong, Cheuk W.
    Rawat, Pawan
    2013 24TH ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC), 2013, : 352 - 359
  • [2] Scatterometry-based Process Control for Nanoimprint Lithography
    Asano, Masafumi
    Tsuda, Hirotaka
    Komori, Motofumi
    Matsuki, Kazuto
    Abe, Hideaki
    Jung, Woo-Yung
    METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXX, 2016, 9778
  • [3] Evaluation of measurement uncertainties in EUV scatterometry
    Gross, H.
    Scholze, F.
    Rathsfeld, A.
    Baer, M.
    MODELING ASPECTS IN OPTICAL METROLOGY II, 2009, 7390
  • [4] New approaches for scatterometry-based metrology for critical distance and overlay measurement and process control
    Bhattacharyya, Kaustuve
    Wright, Noelle
    van der Schaar, Maurits
    den Boef, Arie
    Hinnen, Paul
    Shahrjerdy, Mir
    Wang, Vivien
    Lin, Spencer
    Wang, Cathy
    Ke, Chih-Ming
    Huang, Jacky
    Wang, Willie
    JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2011, 10 (01):
  • [5] Scatterometry-based metrology with feature region signatures matching
    Ku, Yi-Sha
    Wang, Shih-Chun
    Shyu, Deh-Ming
    Smith, Nigel
    OPTICS EXPRESS, 2006, 14 (19) : 8482 - 8491
  • [6] Phase shift mask etch process development utilizing a scatterometry-based metrology tool
    Plumhoff, Jason
    Gray, Alexander
    PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY XV, PTS 1 AND 2, 2008, 7028
  • [7] Assessments of Image-based and Scatterometry-based Overlay Targets
    Koay, Chiew-seng
    Felix, Nelson
    Hamieh, Bassem
    Halle, Scott
    Zheng, Chumeng
    Sieg, Stuart
    METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXX, 2016, 9778
  • [8] Analysis of Line-Edge Roughness Using EUV Scatterometry
    Herrero, Analia Fernandez
    Scholze, Frank
    Dai, Gaoliang
    Soltwisch, Victor
    NANOMANUFACTURING AND METROLOGY, 2022, 5 (02) : 149 - 158
  • [9] The effect of line roughness on the reconstruction of line profiles for EUV masks from EUV scatterometry
    Kato, Akiko
    Scholze, Frank
    EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY, 2010, 7636
  • [10] Surface roughness measurement with optical scatterometry
    Saarinen, J
    Kallioniemi, I
    Niinistö, A
    Friberg, AT
    ADVANCED PHOTONIC SENSORS AND APPLICATIONS, 1999, 3897 : 570 - 577