Growth of Crystalline ZnO Films on the Nitridated (0001) Sapphire Surface

被引:7
|
作者
Butashin, A. V. [1 ]
Kanevsky, V. M. [1 ]
Muslimov, A. E. [1 ]
Prosekov, P. A. [1 ,4 ]
Kondratev, O. A. [1 ,4 ]
Blagov, A. E. [1 ,4 ]
Vasil'ev, A. L. [1 ,4 ]
Rakova, E. V. [1 ]
Babaev, V. A. [2 ]
Ismailov, A. M. [2 ]
Vovk, E. A. [3 ]
Nizhankovsky, S. V. [3 ]
机构
[1] Russian Acad Sci, Shubnikov Inst Crystallog, Moscow 119333, Russia
[2] Dagestan State Univ, Makhachkala 367000, Russia
[3] Natl Acad Sci Ukraine, Inst Single Crystals, UA-61103 Kharkov, Ukraine
[4] Natl Res Ctr, Kurchatov Inst, Moscow 123182, Russia
基金
俄罗斯基础研究基金会;
关键词
X-RAY; EPITAXIAL-FILMS; SUBSTRATE; DOMAINS;
D O I
10.1134/S1063774515040094
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The surface morphology and structure of (0001) sapphire substrates subjected to thermochemical nitridation in a mixture of N-2, DD, and De(2) gases are investigated by electron and probe microscopy and X-ray and electron diffraction. It is shown that an aluminum nitride layer is formed on the substrate surface and heteroepitaxial ZnO films deposited onto such substrates by magnetron sputtering have a higher quality when compared with films grown on sapphire.
引用
收藏
页码:565 / 569
页数:5
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