Gallium nitride devices for power electronic applications

被引：487
|
作者：
Baliga, B. Jayant [1 ]
机构：
[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2013年 / 28卷 / 07期
关键词：
HIGH-VOLTAGE; EDGE TERMINATION; ALGAN/GAN; TRANSISTORS; HFETS; GATE;
D O I：
10.1088/0268-1242/28/7/074011
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Recent success with the fabrication of high-performance GaN-on-Si high-voltage HFETs has made this technology a contender for power electronic applications. This paper discusses the properties of GaN that make it an attractive alternative to established silicon and emerging SiC power devices. Progress in development of vertical power devices from bulk GaN is reviewed followed by analysis of the prospects for GaN-on-Si HFET structures. Challenges and innovative solutions to creating enhancement-mode power switches are reviewed.
引用
收藏
页数：8
相关论文
共 50 条
  • [1] Gallium Nitride Power Electronic Devices and Circuits: A Review
    Town, Graham E.
    2015 IEEE 11TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND DRIVE SYSTEMS (PEDS 2015), 2015, : 1 - 3
  • [2] A REVIEW ON GALLIUM NITRIDE SWITCHING POWER DEVICES AND APPLICATIONS
    de Paula, Wesley J.
    Tavares, Pedro L.
    Pereira, Denis de C.
    Tavares, Gabriel M.
    Silva, Filipe L.
    Almeida, Pedro S.
    Braga, Henrique A. C.
    2017 XIV BRAZILIAN POWER ELECTRONICS CONFERENCE (COBEP), 2017,
  • [3] Advanced Power Electronic Devices Based on Gallium Nitride (GaN)
    Piedra, Daniel
    Lu, Bin
    Sun, Min
    Zhang, Yuhao
    Matioli, Elison
    Gao, Feng
    Chung, Jinwook
    Saadat, Omair
    Xia, Ling
    Azize, Mohamed
    Palacios, Tomas
    2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2015,
  • [4] Gallium Nitride Power Electronic Devices Modeling Using Machine Learning
    Hari, Nikita
    Ahsan, Mominul
    Ramasamy, Sridhar
    Sanjeevikumar, Padmanaban
    Albarbar, Alhussein
    Blaabjerg, Frede
    IEEE ACCESS, 2020, 8 (08): : 119654 - 119667
  • [5] Reliability Characterization of Gallium Nitride MIS-HEMT Based Cascode Devices for Power Electronic Applications
    Elangovan, Surya
    Cheng, Stone
    Chang, Edward Yi
    ENERGIES, 2020, 13 (10)
  • [6] Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives
    Musumeci, Salvatore
    Barba, Vincenzo
    ENERGIES, 2023, 16 (09)
  • [7] Formation and Applications in Electronic Devices of Lattice-Aligned Gallium Oxynitride Nanolayer on Gallium Nitride
    Chen, Junting
    Zhao, Junlei
    Feng, Sirui
    Zhang, Li
    Cheng, Yan
    Liao, Hang
    Zheng, Zheyang
    Chen, Xiaolong
    Gao, Zhen
    Chen, Kevin J. J.
    Hua, Mengyuan
    ADVANCED MATERIALS, 2023, 35 (12)
  • [8] Prospects for gallium nitride based electronic devices
    Zolper, JC
    PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 997 - 1002
  • [9] FORTHCOMING GALLIUM NITRIDE BASED POWER DEVICES IN PROMPTING THE DEVELOPMENT OF HIGH POWER APPLICATIONS
    Quah, H. J.
    Cheong, K. Y.
    Hassan, Z.
    MODERN PHYSICS LETTERS B, 2011, 25 (02): : 77 - 88
  • [10] Applications of Gallium Nitride in Power Electronics
    Scott, Mark J.
    Li, Jinzhu
    Wang, Jin
    2013 IEEE POWER AND ENERGY CONFERENCE AT ILLINOIS (PECI), 2013, : 1 - 7
12345