A direct extraction formula for the fet temperature noise model

被引：0
|
作者：
Garcia, M
Stenarson, J
Zirath, H
Angelov, I
机构：
[1] Department of Microwave Technology, Chalmers University of Technology, S-41296, Göteborg
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1997年 / 16卷 / 04期
关键词：
FET temperature noise model; FET noise modeling; direct extraction;
D O I：
10.1002/(SICI)1098-2760(199711)16:4<208::AID-MOP4>3.0.CO;2-P
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents an analytical expression for the conversion from a measured noise figure to the associated drain noise temperature in the FET temperature noise model. A commercially available GaAs FET is modeled. Comparisons between measured and modeled noise parameters are presented in the frequency range 2-26 GHz. (C) 1997 John Wiley & Sons, Inc.
引用
收藏
页码：208 / 212
页数：5
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