Improvement of performances HfO2-based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al2O3

被引：17
|
作者：
Azzaz, M. [1 ,2 ]
Benoist, A. [1 ]
Vianello, E. [2 ]
Garbin, D. [2 ]
Jalaguier, E. [2 ]
Cagli, C. [2 ]
Charpin, C. [2 ]
Bernasconi, S. [2 ]
Jeannot, S. [1 ]
Dewolf, T. [2 ]
Audoit, G. [2 ]
Guedj, C. [2 ]
Denorme, S. [1 ]
Candelier, P. [1 ]
Fenouillet-Beranger, C. [2 ]
Perniola, L. [2 ]
机构：
[1] STMicroelectronics, 850 Rue Jean Monnet, F-38920 Crolles, France
[2] CEA, LETI, Minatech Campus,17 Rue Martyrs, F-38054 Grenoble, France
来源：
SOLID-STATE ELECTRONICS | 2016年 / 125卷
关键词：
HfO2; Al2O3; RRAM; Demonstrator; HRS variability; Trap assisted tunneling;
D O I：
10.1016/j.sse.2016.07.007
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this article, the reliability of HfO2-based RRAM devices integrated in an advanced 28 nm CMOS 16 kbit demonstrator is presented. In order to improve the memory performance, a thin Al2O3 layer is inserted in the HfO2-based memory stack (TiN/Ti/HfO2/Al2O3/TiN). Thanks to extensive electrical characterizations on both single layer HfO2 and bilayer HfO2/Al2O3 memory stacks at device and array levels, the potential of the bilayer is put forward. From the experimental results, the thin Al2O3 layer has allowed to improve the endurance (memory window of about one decade after 1 M cycles) and data retention (both the low and the high resistance states are stable after 6 h at 200 degrees C. Finally, thanks to our 3D model based on calculation of the Conductive Filament resistance using trap assisted tunneling (TAT) the role of Al2O3 as series resistance is highlighted. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：182 / 188
页数：7
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