Silicon-based LED Display Array in Standard CMOS Technology

被引：0
|
作者：
Dong, Zan [1 ,2 ]
Wang, Wei [1 ,2 ]
Huang, Beiju [1 ,2 ]
Zhang, Xu [1 ,2 ]
Guan, Ning [1 ,2 ]
Chen, Jin [1 ,2 ]
Gui, Yun [1 ,2 ]
Liu, Haijun [1 ,2 ]
Chen, Hongda [1 ,2 ]
机构：
[1] Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing, Peoples R China
[2] Chinese Acad Sci, ISCAS, Inst Semicond, Beijing, Peoples R China
来源：
2010 7TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) | 2010年
基金：
中国国家自然科学基金;
关键词：
display array; light emitting diodes (LEDs); silicon-based; standard CMOS technology;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Silicon-based light emitting diode (LED) display arrays, the static array and the dynamic array, are designed based on silicon p-n junction in standard 0.35-mu m CMOS technology. The LED optical spectrum shows main peak at 760nm.
引用
收藏
页码：332 / 334
页数：3
相关论文
共 50 条
  • [1] A 630dpi dynamic LED display array in standard Si-based CMOS technology
    Dong Zan
    Wang Wei
    Huang BeiJu
    Zhang Xu
    Guan Ning
    Chen HongDa
    SCIENCE CHINA-INFORMATION SCIENCES, 2012, 55 (10) : 2409 - 2416
  • [2] A 630dpi dynamic LED display array in standard Si-based CMOS technology
    DONG Zan
    ScienceChina(InformationSciences), 2012, 55 (10) : 2409 - 2416
  • [3] A 630dpi dynamic LED display array in standard Si-based CMOS technology
    Zan Dong
    Wei Wang
    BeiJu Huang
    Xu Zhang
    Ning Guan
    HongDa Chen
    Science China Information Sciences, 2012, 55 : 2409 - 2416
  • [4] Challenge of process integration in silicon-based CMOS technology
    Nishi, Y
    ULSI PROCESS INTEGRATION, 1999, 99 (18): : 3 - 10
  • [5] Low threshold voltage light-emitting diode in silicon-based standard CMOS technology
    Dong, Zan
    Wang, Wei
    Huang, Beiju
    Zhang, Xu
    Guan, Ning
    Chen, Hongda
    CHINESE OPTICS LETTERS, 2011, 9 (08)
  • [6] Low threshold voltage light-emitting diode in silicon-based standard CMOS technology
    董赞
    王伟
    黄北举
    张旭
    关宁
    陈弘达
    Chinese Optics Letters, 2011, 9 (08) : 79 - 82
  • [7] Scaling silicon-based quantum computing using CMOS technology
    Gonzalez-Zalba, M. F.
    de Franceschi, S.
    Charbon, E.
    Meunier, T.
    Vinets, M.
    Dzurak, A. S.
    NATURE ELECTRONICS, 2021, 4 (12) : 872 - 884
  • [8] Scaling silicon-based quantum computing using CMOS technology
    M. F. Gonzalez-Zalba
    S. de Franceschi
    E. Charbon
    T. Meunier
    M. Vinet
    A. S. Dzurak
    Nature Electronics, 2021, 4 : 872 - 884
  • [9] A porous silicon LED based on a standard BCD technology
    Barillaro, G
    Pieri, F
    Mastromatteo, U
    OPTICAL MATERIALS, 2001, 17 (1-2) : 91 - 94
  • [10] Study of silicon-based MEMS technology and its standard process
    Inst. of Microelectron., Peking Univ., Beijing 100871, China
    Tien Tzu Hsueh Pao/Acta Electronica Sinica, 2002, 30 (11): : 1577 - 1584
12345