Measuring system for photoresist development parameters

To investigate the photoresist development characteristics, a development parameter extracting system for photoresists has been developed utilizing a development rate monitoring system and an exposure parameter measuring system for photoresists. This system is used to obtain the development parameters of a super-high resolution i-line photoresist, PFR-ix500EL (Japan Synthetic Rubber Co., Ltd.), using the development rate equations by Dill, Kim, and Mack. At the same time, the dependence of the simulated profiles on the development rate equations is investigated. Focus latitude for achieving 0.5 mu m lines and spaces under the conditions of exposure wavelength of 365 nm, NA = 0.5, and sigma = 0.6 is evaluated; the simulated and experimental results are compared. It is found that when Mack's equation is used to simulate the development rate, the simulated and experimental results are in good agreement.