Atomic layer deposited single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A

被引：5

作者：

Young, Lawrence Boyu ^{[1
,2
]}

Cheng, Chao-Kai ^{[1
,2
]}

Lu, Guan-Jie ^{[1
,2
]}

Lin, Keng-Yung ^{[1
,2
]}

Lin, Yen-Hsun ^{[1
,2
]}

Wan, Hsien-Wen ^{[1
,2
]}

Li, Mei-Yi ^{[3
]}

Cai, Ren-Fong ^{[4
]}

Lo, Shen-Chuan ^{[4
]}

Hsu, Chia-Hung ^{[5
]}

Kwo, Jueinai ^{[6
]}

Hong, Minghwei ^{[1
,2
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Appl Phys, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Dept Phys, Taipei 10617, Taiwan

[3] Natl Nano Device Labs, Hsinchu 30078, Taiwan

[4] Ind Technol Res Inst, Mat & Chem Res Labs, Hsinchu 30013, Taiwan

[5] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan

[6] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2017年 / 35卷 / 01期

关键词：

RARE-EARTH; AL2O3; FILMS; Y2O3;

D O I：

10.1116/1.4971989

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Single-crystal hexagonal perovskite YAlO3 has been attained through postdeposition rapid thermal annealing with temperatures above 900 degrees C on nanolaminated atomic-layer-deposited Y2O3 (2.03 nm)/Al2O3 (1.08 nm) multilayers. The perovskite film is epitaxially grown on GaAs(111) A substrates. The crystallography of the heterostructure was studied utilizing synchrotron radiation x-ray diffraction (XRD) and scanning transmission electron microscopy (STEM). The epitaxial relationship between YAlO3 and GaAs is YAlO3(0001) [11 (2) over bar0] parallel to GaAs (111) [10 (1) over bar], as determined from the radial scan along the in-plane direction. The cross-sectional STEM image reveals that the crystalline YAlO3 is continuous and the XRD study detects no other crystalline phases. (C) 2016 American Vacuum Society.

引用

页数：4

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