Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT

被引：29

作者：

Malik, Amit ^{[1
]}

Sharma, Chandan ^{[1
]}

Laishram, Robert ^{[1
]}

Bag, Rajesh Kumar ^{[1
]}

Rawal, Dipendra Singh ^{[1
]}

Vinayak, Seema ^{[1
]}

Sharma, Rajesh Kumar ^{[1
]}

机构：

[1] Solid State Phys Lab DRDO, Delhi 110054, India

来源：

SOLID-STATE ELECTRONICS | 2018年 / 142卷

关键词：

AlGaN/GaN HEMT; Interface states; Reverse gate bias stress; TCAD ATLAS simulation; Threshold-Voltage Shift; ELECTRON-MOBILITY; POLARIZATION; MECHANISM;

D O I：

10.1016/j.sse.2018.01.002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article reports negative shift in the threshold-voltage in AlGaN/GaN high electron mobility transistor (HEMT) with application of reverse gate bias stress. The device is biased in strong pinch-off and low drain to source voltage condition for a fixed time duration (reverse gate bias stress), followed by measurement of transfer characteristics. Negative threshold voltage shift after application of reverse gate bias stress indicates the presence of more carriers in channel as compared to the unstressed condition. We propose the presence of AlGaN/GaN interface states to be the reason of negative threshold voltage shift, and developed a process to electrically characterize AlGaN/GaN interface states. We verified the results with Technology Computer Aided Design (TCAD) ATLAS simulation and got a good match with experimental measurements.

引用

页码：8 / 13

页数：6

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