Piezoelectric MEMS Stress Sensor with Thin Lead Zirconate Titanate (PZT) Layer

被引：0
|
作者：
Kolev, Georgi [1 ]
Aleksandrova, Mariya [1 ]
Videkov, Valentin [1 ]
Denishev, Krassimir [1 ]
Truhchev, Petar [1 ]
机构：
[1] Tech Univ Sofia, Dept Microelect, Fac Elect Engn & Technol, Sofia 1000, Bulgaria
来源：
2012 20TH TELECOMMUNICATIONS FORUM (TELFOR) | 2012年
关键词：
MEMS; sensors; piezoelectric; PZT; FILMS;
D O I：
暂无
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
In this study results from fabrication and testing of MEMS stress sensor with piezoelectric sensitive layer of lead zirconate titanate (PZT) are presented. PZT layers are deposited by RF-sputtering in vacuum. The dependence of the voltage, generated by the structure, on the applied stress is investigated for two different electrode configurations - sandwich type and lateral type, with aluminum electrodes. The obtained results show high piezoelectric coefficient of 186 pC for thickness of PZT-layer of 180 nm. The maximal generated voltage is 35 mV for lateral structure in the stress range of 0-300 mgr. The sandwich structure is sensitive above 1,1 gr and the maximal voltage is 200 mV.
引用
收藏
页码：991 / 993
页数：3
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