Active-inductor-based low-power broadband harmonic VCO in SiGe technology for wideband and multi-standard applications

被引：3

作者：

Mukhopadhyay, R ^{[1
]}

Park, Y ^{[1
]}

Yoon, SW ^{[1
]}

Lee, CH ^{[1
]}

Nuttinck, S ^{[1
]}

Cressler, JD ^{[1
]}

Laskar, J ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch ECE, Georgia Elect Design Ctr, Atlanta, GA 30332 USA

来源：

2005 IEEE MTT-S International Microwave Symposium, Vols 1-4 | 2005年

关键词：

active inductor; BiCMOS; broadband; HBT; harmonics; non-linearity; silicon-germanium; SiGe; tunable active inductor (TAI); tuning range; VCO;

D O I：

10.1109/MWSYM.2005.1516931

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the first reported description, analysis, and measured performance of a wideband harmonic generation technique that utilizes the non-linearity of a tunable active inductor (TAI) in SiGe technology. The technique demonstrates the highest reported measured fundamental tuning range of 3.5 GHz, for a TAI-VCO, from 1.7-5.2 GHz (100% tuning) while consuming only 3.7 mW from a 1.8 V supply. Higher frequencies, as high as the 4th harmonics, between 3.4-8.4 GHz, are generated with output power close to or higher than that of the fundamental frequency. Detailed analysis has been pet-formed to optimize the noise performance of the TAI, as well as to study the principle of harmonic generation.

引用

页码：1349 / 1352

页数：4

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