Effect of Glass Frit in Metallization Paste on the Electrical Losses in Bifacial N-type Crystalline Silicon Solar Cells

被引：0
|
作者：
Aoyama, Takayuki [1 ,2 ]
Aoki, Mari [3 ]
Sumita, Isao [3 ]
Yoshino, Yasushi [1 ]
Ogura, Atsushi [2 ]
机构：
[1] Noritake Co Ltd, 300 Higashiyama,Miyoshi Cho, Miyoshi, Aichi 4700293, Japan
[2] Meiji Univ, Tama Ku, 1-1-1 Higashi Mita, Kawasaki, Kanagawa 2148571, Japan
[3] Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, Japan
来源：
2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2016年
关键词：
n-type; c-Si; metallization; paste; glass frit; shunting; recombination; BORON;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
N-type crystalline silicon can be expected to achieve high-efficiency compared with p-type one. For the n-type solar cells, silver/aluminum paste has been used as metallization for p(+) emitter, which induces loss in open circuit voltage (V-oc) of the cells. In this study, the effects of glass frit in the metallization paste on the loss in V-oc are investigated, dividing the respective effects of the glass frit and the aluminum in the paste. The glass frit in the metallization paste decreases the V-oc due to shunting of p-n junction and increasing
引用
收藏
页码：2854 / 2858
页数：5
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