Low-Light-Level Readout Based on Quantum Dots-in-Well Photodetector at Room Temperature

被引:0
|
作者
Mao Feng [1 ]
Wang Ming-jia [2 ]
机构
[1] Shanghai Inst Technol, Elect & Elect Engn, Shanghai 201418, Peoples R China
[2] Qingdao Univ Sci & Technol, Coll Automat & Elect Engn, Qingdao 266042, Shandong, Peoples R China
关键词
Optoelectronics; Low-light-level; Microscopy hyperspectral; High-sensitivity;
D O I
10.3964/j.issn.1000-0593(2019)03-0877-05
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
In this paper, the photoluminescence detection of quantum dot photodetector arrays is studied. The quantum dot detector adopts AlAs/GaAs/AlAs dual-barrier structure. In the wide GaAs well, there are InAs quantum dots (QDs) and In-0.15 Ga-0.85 As quantum Well (QW), and a simple device model for analysis is built. Under the irradiation of 632.8 nm He-Ne laser at room temperature, when the optical power is 0.01 pW and the bias voltage of the device is -0.5 V, the integration time is 80.2 mu s and the voltage response rate is 7.0 x 10(11) V.W-1, which has a very high sensitivity. At the temperature of 300 K, this quantum dot detector can detect the very weak light whose power is less than 10(-14) W. The high-sensitivity spectrometer and molecular hyperspectral system developed with this kind of quantum dot photodetector are used to detect biological tissue samples. A spectroscopic system for mutual verification and mutual calibration of biological tissues is developed.
引用
收藏
页码:877 / 881
页数:5
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