Ni-Mn-Ga thin films produced by pulsed laser deposition

被引：47
|
作者：
Tello, PG
Castaño, FJ
O'Handley, RC
Allen, SM
Esteve, M
Castaño, F
Labarta, A
Batlle, X
机构：
[1] Univ Basque Country, Dept Quim Fis, E-48080 Bilbao, Spain
[2] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
[3] Univ Barcelona, Fac Fis, Dept Fis Fonamental, E-08028 Barcelona, Spain
来源：
JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 10期
关键词：
D O I：
10.1063/1.1452222
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Polycrystalline Ni-Mn-Ga thin films have been deposited by the pulsed laser deposition (PLD) technique, using slices of a Ni-Mn-Ga single crystal as targets and onto Si (100) substrates at temperatures ranging from 673 K up to 973 K. Off-stoichiometry thin films were deposited at a base pressure of 1x10(-6) Torr or in a 5 mTorr Ar atmosphere. Samples deposited in vacuum and temperatures above 823 K are magnetic at room temperature and show the austenitic {220} reflection in their x-ray diffraction patterns. The temperature dependences of both electrical resistance and magnetic susceptibility suggest that these samples exhibit a structural martensitic transition at around 260 K. The magnetoresistance ratio at low temperature can be as high as 1.3%, suggesting the existence of a granular structure in the films. (C) 2002 American Institute of Physics.
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收藏
页码：8234 / 8236
页数：3
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