Slip defect generation on GaAs wafers during high temperature process: A thermoelastic study from a crystallographic viewpoint

被引：2
|
作者：
Sawada, S
Yoshida, H
Kiyama, M
Mukai, H
Nakai, R
Takebe, T
Tatsumi, M
Kaji, M
Fujita, K
机构：
来源：
GAAS IC SYMPOSIUM - 18TH ANNUAL, TECHNICAL DIGEST 1996 | 1996年
关键词：
D O I：
10.1109/GAAS.1996.567635
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work we investigate the mechanism of slip defect generation, using a simple heat now simulation during an MBE process, a wafer heating apparatus, and a thermoelastic analysis from a crystallographic viewpoint. We find that the slip defect pattern predicted from the analysis agrees with the experiment and confirm that slip defects are prone to occur at orientation nat (OF) and notch edge.
引用
收藏
页码：50 / 53
页数：2
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