Citrate-assisted hydrothermal synthesis of vanadium dioxide textured films with metal-insulator transition and infrared thermochromic properties
被引:11
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作者:
Ivanov, Alexey, V
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Lomonosov Moscow State Univ, Dept Mat Sci, Moscow 119991, Russia
RAS, Kurnakov Inst Gen & Inorgan Chem, Moscow 119991, RussiaLomonosov Moscow State Univ, Dept Mat Sci, Moscow 119991, Russia
Ivanov, Alexey, V
[1
,2
]
Makarevich, Olga N.
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Lomonosov Moscow State Univ, Dept Chem, Moscow 119991, RussiaLomonosov Moscow State Univ, Dept Mat Sci, Moscow 119991, Russia
Makarevich, Olga N.
[3
]
Boytsova, Olga, V
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RAS, Kurnakov Inst Gen & Inorgan Chem, Moscow 119991, RussiaLomonosov Moscow State Univ, Dept Mat Sci, Moscow 119991, Russia
Boytsova, Olga, V
[2
]
Tsymbarenko, Dmitry M.
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Lomonosov Moscow State Univ, Dept Chem, Moscow 119991, RussiaLomonosov Moscow State Univ, Dept Mat Sci, Moscow 119991, Russia
Tsymbarenko, Dmitry M.
[3
]
Eliseev, Andrei A.
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Lomonosov Moscow State Univ, Dept Mat Sci, Moscow 119991, RussiaLomonosov Moscow State Univ, Dept Mat Sci, Moscow 119991, Russia
Eliseev, Andrei A.
[1
]
Amelichev, Vadim A.
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SuperOx, 20-2 Nauchnyi Proezd, Moscow 117246, RussiaLomonosov Moscow State Univ, Dept Mat Sci, Moscow 119991, Russia
Amelichev, Vadim A.
[4
]
Makarevich, Artem M.
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RAS, Kurnakov Inst Gen & Inorgan Chem, Moscow 119991, Russia
SuperOx, 20-2 Nauchnyi Proezd, Moscow 117246, RussiaLomonosov Moscow State Univ, Dept Mat Sci, Moscow 119991, Russia
Makarevich, Artem M.
[2
,4
]
机构:
[1] Lomonosov Moscow State Univ, Dept Mat Sci, Moscow 119991, Russia
[2] RAS, Kurnakov Inst Gen & Inorgan Chem, Moscow 119991, Russia
[3] Lomonosov Moscow State Univ, Dept Chem, Moscow 119991, Russia
[4] SuperOx, 20-2 Nauchnyi Proezd, Moscow 117246, Russia
The present study reports the fast synthesis of VO2 (M-1) oriented films on the r-Al2O3(012) substrates by the hydrothermal method using citric acid and vanadium (V) oxide as precursors with post deposition annealing in inert atmosphere. The effects of synthesis parameters (solution concentration and autoclave filling factor) on the films composition, morphology and electric properties are considered using XRD, Raman spectroscopy, AFM and SEM. The obtaining VO2(M-1)/r-Al2O3 films show a metal-insulator transition with resistivity change of similar to 3.5 orders of magnitude and excellent thermochromic properties in the long-wavelength IR region. This work demonstrates a promising technique to promote the commercial implementation of VO2 as material for design of infrared (IR) switch devices.
机构:
SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USATokyo Univ Sci, Fac Sci, Dept Phys, Shinjyuku Ku, Tokyo 1628601, Japan
Fujita, Shigeji
Jovaini, Azita
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SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USATokyo Univ Sci, Fac Sci, Dept Phys, Shinjyuku Ku, Tokyo 1628601, Japan
Jovaini, Azita
Godoy, Salvador
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机构:
Univ Nacl Autonoma Mexico, Fac Ciencias, Dept Fis, Mexico City 04510, DF, MexicoTokyo Univ Sci, Fac Sci, Dept Phys, Shinjyuku Ku, Tokyo 1628601, Japan
Godoy, Salvador
Suzuki, Akira
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Tokyo Univ Sci, Fac Sci, Dept Phys, Shinjyuku Ku, Tokyo 1628601, JapanTokyo Univ Sci, Fac Sci, Dept Phys, Shinjyuku Ku, Tokyo 1628601, Japan