Ultrafast recombination in Si-doped InN

被引：44
|
作者：
Ascázubi, R
Wilke, I
Cho, SH
Lu, H
Schaff, WJ
机构：
[1] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
[2] Silla Univ, Dept Photon, Pusan, South Korea
[3] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 11期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2185407
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report femtosecond near-infrared transient photoreflection measurements of native n-type indium nitride and silicon-doped indium nitride thin films. The overall time dependence of the ultrafast reflectivity transient is characterized by the different time scales of carrier cooling and carrier recombination. Experimental analysis demonstrates nonradiative recombination in the picosecond and subpicosecond range as the dominant recombination mechanism at room temperature even at very high carrier concentrations. Silicon-doped InN films exhibit carrier lifetimes as short as 680 fs. (c) 2006 American Institute of Physics.
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页数：3
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