Fabrication, characterization, and optimization of an ultraviolet silicon sensor

被引：3

作者：

Berman-Mendoza, Dainet ^{[1
]}

Aceves-Mijares, Mariano ^{[2
]}

Berriel-Valdos, Luis R. ^{[2
]}

Pedraza, Jorge ^{[2
]}

Vera-Marquina, Alicia ^{[1
]}

机构：

[1] Univ Sonora, Dept Invest Fis, Hermosillo, Sonora, Mexico

[2] INAOE, Pubela 72000, Mexico

来源：

OPTICAL ENGINEERING | 2008年 / 47卷 / 10期

关键词：

ultraviolet; silicon sensor; silicon rich oxide;

D O I：

10.1117/1.3000434

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This work shows the design, fabrication, and optimization of a silicon sensor with an extended sensing range toward the UV region. The main characteristic of this detector is the enlargement of the common silicon detection range to the ultraviolet region (240 to 400 nm). The fabrication process of this detector is compatible with complementary metal oxide semiconductor (CMOS) silicon technology, which makes it cheaper than commercial UV detectors. (C) 2008 Society of Photo-Optical Instrumentation Engineers. [DOI: 10.1117/1.3000434]

引用

页数：5

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