Polaron and band nonparabolicity effects for n-InP in magnetic fields

To study the resonant-polaron and band nonparabolicity effects for a semiconductor in the presence of a magnetic field, we have made cyclotron resonance absorption measurements for conduction electrons in n-InP at 4.2 K for the far-infrared (FIR) light regions. By employing. the photo- and electric field excitation techniques, we have succeeded to estimate the contributions of above-mentioned effects precisely. The experimental and theoretical results are shown as a function of the magnetic field. The conduction band-edge mass m(e0) and the polaron coupling constant a are used as the fitting parameters and the excellent agreement between experimental and theoretical results are obtained. We have concluded that m(e0)/m(fe) = 0.0788 and alpha = 0.12 for InP.