Towards flexible magnetoelectronics:: Buffer-enhanced and mechanically tunable GMR of Co/Cu multilayers on plastic substrates

被引：112

作者：

Chen, Yuan-fu ^{[1
]}

Mei, Yongfeng ^{[1
]}

Kaltofen, Rainer ^{[1
]}

Moench, Jens Ingolf ^{[1
]}

Schumann, Joachim ^{[1
]}

Freudenberger, Jens ^{[2
]}

Klauss, Hans-Joerg ^{[2
]}

Schmidt, Oliver G. ^{[1
]}

机构：

[1] IFW Dresden, Inst Integrat Nanosci, D-01069 Dresden, Germany

[2] IFW Dresden, Inst Metall Mat, D-01069 Dresden, Germany

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 17期

关键词：

D O I：

10.1002/adma.200800230

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Strongly enhanced GMR on flexible substrates is reported for (Co_1 nm/Cu_1 nm)(N) multilayers deposited on plastics (P) by introducing a photoresist (PR) buffer layer. GMR values of Co/Cu multilayers on buffered flexible substrates are even larger than those on thermally oxidized Si (Si) substrates due to an increased antiferromagnetic coupling fraction. The GMR effect can be easily tuned mechanically by substrate stretching.

引用

页码：3224 / +

页数：6

共 10 条

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