An Analysis of Efficiency Variation in an Al0.7Ga0.3As/Al0.48In0.52As Heterojunction Solar Cell with Change in Device Parameters Using Adept 1D Software

In this paper, efficiency variation with change in device parameters (layer thickness and doping concentration) has been investigated in an Al0.7Ga0.3As/Al0.48In0.52As heterojunction solar cell using Adept 1D simulation software. The device uses a n-type Al0.7Ga0.3As top layer (Emitter), a p-type Al0.48In0.52As middle layer (Base), and ap-type Ga0.67In0.33As bottom layer, which, under high doping, acts as a passivating (BSF) layer. Germanium (Ge) substrate (p-doped) is used for the structure. Variation in efficiency is plotted against a particular changing parameter, keeping every other parameter fixed at some default value. After analysing the variation curves, two optimized designs have been proposed, which yield 19.57% and 20.56% efficiency, respectively.