Extra-Low Temperature Growth of ZnO Thin Films by Atomic Layer Deposition

被引：4

作者：

Guziewicz, E. ^{[1
]}

Godlewski, M. ^{[1
,2
]}

Kopalko, K. ^{[1
]}

Kowalik, I. A. ^{[1
]}

Yatsunenko, S. ^{[1
]}

Osinnyi, V. ^{[1
]}

Paszkowicz, W. ^{[1
]}

Lusakowska, E. ^{[1
]}

Dluzewski, P. ^{[1
]}

机构：

[1] Polish Acad Sci, Inst Phys, Warsaw, Poland

[2] Cardinal S Wyszynski Univ, Coll Sci, Dept Math & Nat Sci, Warsaw, Poland

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2008年 / 53卷 / 05期

关键词：

Low-temperature growth; Zinc oxide; Atomic layer deposition; Optical properties;

D O I：

10.3938/jkps.53.2880

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on ZnO thin films grown by the atomic layer deposition method at temperature of 200 degrees C and below. Low-temperature ZnO layers show bright excitonic photoluminescence for "as-grown" samples. Defect-related bands usually observed in the green and the red regions are of low intensity and are absent for ZnO layers grown at 140 degrees C - 200 degrees C, which is evidence that competing radiative decay channels are ineffective. We relate this to a blocking of the vacancy formation, which is thermally suppressed at low growth temperature. Hall measurements show that the free-carrier concentration strongly depends on the growth temperature and has the lowest value of 2 . 10(17)/cm(3) for films grown at 100 degrees C and below.

引用

页码：2880 / 2883

页数：4

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