Multi-Scale Simulation Study of the Strained Si Nanowire FETs

被引：0

作者：

Lee, Jaehyun ^{[1
]}

Medina-Bailon, Cristina ^{[1
]}

Berrada, Salim ^{[1
]}

Carrillo-Nunez, Hamilton ^{[1
]}

Sadi, Toufik ^{[2
]}

Georgiev, Vihar P. ^{[1
]}

Nedjalkov, Mihail ^{[3
]}

Selberherr, Siegfried ^{[3
]}

Asenov, Asen ^{[1
]}

机构：

[1] Univ Glasgow, Sch Engn, Glasgow, Lanark, Scotland

[2] Aalto Univ, Dept Neurosci & Biomed Engn, Aalto, Finland

[3] TU Vienna, Inst Microelect, Vienna, Austria

来源：

2018 IEEE 13TH NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE (NMDC) | 2018年

基金：

英国工程与自然科学研究理事会;

关键词：

DFT; Nanowire; Strain; Mobility; TRANSPORT; MOBILITY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we study 2.1nm-diameter uniaxial strained Si gate-all-around nanowire field-effect transistors, focusing on the electron mobility and the variability due to random discrete dopants (RDDs). Firstly, we extract the electron effective masses under various strains from Density Functional Theory (DFT) simulations. Secondly, we present the impact of the strain on the electron mobility in the Si nanowire using the Kubo-Greenwood formalism with a set of multi-subband phonon, surface roughness, and ionized impurity scattering mechanisms. Finally, we perform quantum transport simulations to investigate the effect of RDD on the threshold voltage and ON-state current variation.

引用

页码：281 / 284

页数：4

共 50 条

[1] Strained Si Nanowire Tunnel FETs and Inverters
Zhao, Q. T.
Knoll, L.
Richter, S.
Schmidt, M.
Blaeser, S.
Luong, G. V.
Wirths, S.
Nichau, A.
Schaefer, A.
Trellenkamp, S.
Hartmann, J. -M.
Bourdelle, K. K.
Buca, D.
Mantl, S.
2013 THIRD BERKELEY SYMPOSIUM ON ENERGY EFFICIENT ELECTRONIC SYSTEMS (E3S), 2013,
[2] Multi-scale modeling of 2D GaSe FETs with strained channels
Toral-Lopez, A.
Santos, H.
Marin, E. G.
Ruiz, F. G.
Palacios, J. J.
Godoy, A.
NANOTECHNOLOGY, 2022, 33 (10)
[3] Strained Si and SiGe Nanowire Tunnel FETs for Logic and Analog Applications
Zhao, Qing-Tai
Richter, Simon
Schulte-Braucks, Christian
Knoll, Lars
Blaeser, Sebastian
Gia Vinh Luong
Trellenkamp, Stefan
Schaefer, Anna
Tiedemann, Andreas
Hartmann, Jean-Michel
Bourdelle, Konstantin
Mantl, Siegfried
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2015, 3 (03): : 103 - 114
[4] Assessment of the Electrical Performance of Short Channel InAs and Strained Si Nanowire FETs
Grillet, Corentin
Logoteta, Demetrio
Cresti, Alessandro
Pala, Marco G.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (05) : 2425 - 2431
[5] A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs
Seoane, Natalia
Nagy, Daniel
Indalecio, Guillermo
Espineira, Gabriel
Kalna, Karol
Garcia-Loureiro, Antonio
MATERIALS, 2019, 12 (15)
[6] Electron-Phonon Scattering Effect on Strained Si Nanowire FETs at Low Temperature
Tsuchida, I.
Seike, A.
Takai, H.
Masuda, J.
Kosemura, D.
Ogura, A.
Watanabe, T.
Ohdomari, I.
PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7, 2009, 25 (06): : 439 - 443
[7] Multi-Scale Simulation of Nucleation and Growth of Nanoscale SiC on Si
Pezoldt, J.
Kulikov, D. V.
Kharlamov, V. S.
Lubov, M. N.
Trushin, Yu. V.
JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 2012, 9 (11) : 1941 - 1966
[8] Multi-scale Simulation of Discrete Systems With Multi-scale Supercomputer
Ge, Wei
Li, Jinghai
POWDERS AND GRAINS 2013, 2013, 1542 : 153 - 156
[9] Study of Gate all around InAs/Si based Nanowire FETs using Simulation Approach
Gupta, Richa
Dass, Devi
Prasher, Rakesh
Vaid, Rakesh
2014 INTERNATIONAL CONFERENCE ON SIGNAL PROPAGATION AND COMPUTER TECHNOLOGY (ICSPCT 2014), 2014, : 557 - 560
[10] Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs
Zhang, Jia-Hong
Huang, Qing-An
Yu, Hong
Lei, Shuang-Ying
SENSORS, 2009, 9 (04) : 2746 - 2759

← 1 2 3 4 5 →