Josephson fluxonic bipolar junction transistor

被引:7
|
作者
Raissi, F [1 ]
机构
[1] KN Toosi Univ Technol, Dept Elect Engn, Tehran 16314, Iran
关键词
D O I
10.1109/TASC.2004.824337
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Josephson fluxonic bipolar junction transistor (JFBJT) has been proposed as a superconducting amplifying element. The results on a simple realization of this device are provided to demonstrate its working principle. These experiments demonstrate that JFBJT provides current gain without suffering from the problems associated with the regular long junction vortex flow transistors. In particular, no resonance structure is present in its IN characteristics and its, impedance can be matched to any load without degradation of its characteristics. Suggestion is made. on how a practical device can be fabricated
引用
收藏
页码:87 / 93
页数:7
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