Effects of surface fermi level pinning and surface state charging on control characteristics of nanometer scale Schottky gates formed on GaAs

被引：0
|
作者：
Kameda, A [1 ]
Kasai, S [1 ]
Sato, T [1 ]
Hasegawa, H [1 ]
机构：
[1] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan
来源：
2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS | 2001年
关键词：
D O I：
10.1109/ISDRS.2001.984598
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：626 / 629
页数：4
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