electromigration;
Schotty and Ohmic contacts;
dislocations in III-V crystals;
microstructures of mixed III-V layers;
integration of dissimilar materials;
low-dimensional structures;
D O I:
暂无
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
We demonstrate using examples that materials science played a crucial role in the evolution of microelectronics in the past, its significant current role and its envisaged role in the future as device dimensions decrease substantially. The technical challenges are significant because we do not fully understand the behavior of materials at extremely small length scales.
机构:
Fac Sci & Tech St Jerome, CNRS, Lab Mat & Microelect Provence, F-13397 Marseille, FranceFac Sci & Tech St Jerome, CNRS, Lab Mat & Microelect Provence, F-13397 Marseille, France