VO2 low temperature deposition and terahertz transmission modulation

被引:10
|
作者
Sun Dan-Dan [1 ]
Chen Zhi [2 ]
Wen Qi-Ye [1 ]
Qiu Dong-Hong [1 ]
Lai Wei-En [1 ]
Dong Kai [1 ]
Zhao Bi-Hui [1 ]
Zhang Huai-Wu [1 ]
机构
[1] Univ Elect Sci & Technol China, State Key Lab Elect Films & Integrated Devices, Chengdu 610054, Peoples R China
[2] Univ Elect Sci & Technol China, Natl Key Lab Sci & Technol Commun, Chengdu 610054, Peoples R China
基金
中国国家自然科学基金;
关键词
vanadium dioxide film; terahertz; phase transition; modulation; VANADIUM DIOXIDE; INSULATOR-TRANSITION;
D O I
10.7498/aps.62.017202
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Recently, the applications of vanadium dioxide film (VO2) in terahertz functional devices have attracted much attention because VO2 has a remarkable response to THz wave, In this work BK7 glass a material highly transparent to both THz and optical band is adopted as a substrate. High-quality VO2 film is deposited on a BK7 substrate using low temperature magnetron sputtering technology. The crystallinity and microstructure of the thin film are investigated by X-ray diffraction and atomic force microscopy. The results indicate that the as-deposited film crystallizes directly into single-phase VO2 with (011) preferred orientation and compact nanostructure. Under a heating-cooling cycle, the film undergos a metal-insulator transition with an abrupt resistivity change reaching more than 4 orders of magnitude. Terahertz transmission modulation is characterized by terahertz time domain spectrum, and a giant modulation depth of 89% is obtained. Due to the high transparence and the huge modulation effect, the VO2/BK7 can be widely used for THz devices such as modulators and switches.
引用
收藏
页数:6
相关论文
共 29 条
  • [1] Coupling terahertz radiation onto a metal wire using a subwavelength coaxial aperture
    Agrawal, Amit
    Nahata, Ajay
    [J]. OPTICS EXPRESS, 2007, 15 (14) : 9022 - 9028
  • [2] High contrast optical switching in vanadium dioxide thin films
    Ben-Messaoud, T.
    Landry, G.
    Gariepy, J. P.
    Ramamoorthy, B.
    Ashrit, P. V.
    Hache, A.
    [J]. OPTICS COMMUNICATIONS, 2008, 281 (24) : 6024 - 6027
  • [3] Grain size effect on the semiconductor-metal phase transition characteristics of magnetron-sputtered VO2 thin films -: art. no. 051910
    Brassard, D
    Fourmaux, S
    Jean-Jacques, M
    Kieffer, JC
    El Khakani, MA
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (05)
  • [4] OPTICAL-PROPERTIES OF VANADIUM DIOXIDE AND VANADIUM PENTOXIDE THIN-FILMS
    CHAIN, EE
    [J]. APPLIED OPTICS, 1991, 30 (19) : 2782 - 2787
  • [5] Nanopattern enabled terahertz all-optical switching on vanadium dioxide thin film
    Choi, S. B.
    Kyoung, J. S.
    Kim, H. S.
    Park, H. R.
    Park, D. J.
    Kim, Bong-Jun
    Ahn, Y. H.
    Rotermund, F.
    Kim, Hyun-Tak
    Ahn, K. J.
    Kim, D. S.
    [J]. APPLIED PHYSICS LETTERS, 2011, 98 (07)
  • [6] CUI JZ, 1998, ACTA PHYS SINICA, V47, P454
  • [7] Memory Metamaterials
    Driscoll, T.
    Kim, Hyun-Tak
    Chae, Byung-Gyu
    Kim, Bong-Jun
    Lee, Yong-Wook
    Jokerst, N. Marie
    Palit, S.
    Smith, D. R.
    Di Ventra, M.
    Basov, D. N.
    [J]. SCIENCE, 2009, 325 (5947) : 1518 - 1521
  • [8] Reconfigurable gradient index using VO2 memory metamaterials
    Goldflam, M. D.
    Driscoll, T.
    Chapler, B.
    Khatib, O.
    Jokerst, N. Marie
    Palit, S.
    Smith, D. R.
    Kim, Bong-Jun
    Seo, Giwan
    Kim, Hyun-Tak
    Di Ventra, M.
    Basov, D. N.
    [J]. APPLIED PHYSICS LETTERS, 2011, 99 (04)
  • [9] Semiconductor to metal transition characteristics of VO2 thin films grown epitaxially on Si (001)
    Gupta, A.
    Aggarwal, R.
    Gupta, P.
    Dutta, T.
    Narayan, Roger J.
    Narayan, J.
    [J]. APPLIED PHYSICS LETTERS, 2009, 95 (11)
  • [10] Metal-insulator phase transition in a VO2 thin film observed with terahertz spectroscopy
    Jepsen, Peter Uhd
    Fischer, Bernd M.
    Thoman, Andreas
    Helm, Hanspeter
    Suh, J. Y.
    Lopez, Rene
    Haglund, R. F., Jr.
    [J]. PHYSICAL REVIEW B, 2006, 74 (20)