Electrically active defects in p-type silicon after alpha-particle irradiation

被引：3

作者：

Danga, Helga T. ^{[1
]}

Auret, F. Danie ^{[1
]}

Tunhuma, Shandirai M. ^{[1
]}

Omotoso, Ezekiel ^{[1
]}

Igumbor, Emmanuel ^{[1
]}

Meyer, Walter E. ^{[1
]}

机构：

[1] Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa

来源：

PHYSICA B-CONDENSED MATTER | 2018年 / 535卷

基金：

新加坡国家研究基金会;

关键词：

Silicon; Laplace-DLTS; Irradiation;

D O I：

10.1016/j.physb.2017.06.070

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this work, we investigated the defects introduced when boron (B) doped silicon (Si) was irradiated by making use of a 5.4 MeV americium (Am) 241 foil radioactive source with a fluence rate of 7x10(6) cm(-2) s(-1) at room temperature. Deep level transient spectroscopy (DLTS) and Laplace-DLTS measurements were used to investigate the electronic properties of the introduced defects. After exposure at a fluence of 5.1x10(10) cm(-2), the energy levels of the hole traps measured were: H(0.10), H(0.16), H(0.33) and H(0.52) The defect level H(0.10) was tri-vacancy related. H(0.33) was identified as the interstitial carbon (C-i) related defect which was a result of radiation induced damage. H(0.52) was a B-related defect. Explicit deductions about the origin of H(0.16) have not yet been achieved.

引用

页码：99 / 101

页数：3

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