InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements

被引：126
|
作者：
King, P. D. C. [1 ]
Veal, T. D. [1 ]
Kendrick, C. E. [2 ]
Bailey, L. R. [1 ]
Durbin, S. M. [2 ]
McConville, C. F. [1 ]
机构：
[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
[2] Univ Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8140, New Zealand
来源：
PHYSICAL REVIEW B | 2008年 / 78卷 / 03期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1103/PhysRevB.78.033308
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High-resolution x-ray photoemission spectroscopy measurements are used to determine the valence band offset of wurtzite-InN/GaN(0001) heterojunctions to be 0.58 +/- 0.08 eV. This is discussed within the context of previous measurements and calculations and is in agreement with the value of 0.52 +/- 0.14 eV determined from the alignment of the experimentally determined charge neutrality levels in InN and GaN. The heterojunction forms in the type-I straddling configuration with a conduction band offset of 2.22 +/- 0.10 eV.
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页数：4
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